| PART |
Description |
Maker |
| CY7C1314BV18-167BZXC |
18-Mbit QDRII SRAM 2 Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1310CV18-167BZXC CY7C1314CV18-167BZI CY7C1314C |
18-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 8 QDR SRAM, 0.5 ns, PBGA165
18-Mbit QDR-IISRAM 2-Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165
72-Mbit QDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
| CY7C1360C-166AXC CY7C1360C-166BGC CY7C1360C-166BZI |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 QDR SRAM, 3 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 QDR SRAM, 3 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 3.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884 |
2Mx36 & 4Mx18 QDR II b4 SRAM
4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC |
512K x 8 SRAM Ultra Low Power SRAM
512K X 8 STANDARD SRAM, 100 ns, CDIP32
512K X 8 STANDARD SRAM, 85 ns, CDSO32
512K X 8 STANDARD SRAM, 70 ns, CDSO32
512K X 8 STANDARD SRAM, 55 ns, CDSO32
|
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
|
| K7Q161854A-FC16 K7Q163654A-FC20 K7Q161854A-FC20 K7 |
1M X 18 QDR SRAM, 3 ns, PBGA165
512Kx36-bit, 1Mx18-bit QDR SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| AS7C33512PFS32_36A AS7C33512PFS36A-166TQIN AS7C335 |
3.3V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| GS88018BT-133 GS88018BT-133I GS88018BT-150 GS88018 |
133MHz 8.5ns 512K x 18 9Mb sync burst SRAM
150MHz 7.5ns 512K x 18 9Mb sync burst SRAM
166MHz 7ns 512K x 18 9Mb sync burst SRAM
200MHz 6.5ns 512K x 18 9Mb sync burst SRAM
225MHz 6ns 512K x 18 9Mb sync burst SRAM
250MHz 5.5ns 512K x 18 9Mb sync burst SRAM
|
GSI Technology
|
| AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
SWITCH
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV |
Memory : Sync SRAMs
18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
